JPH0150905B2 - - Google Patents
Info
- Publication number
- JPH0150905B2 JPH0150905B2 JP55127490A JP12749080A JPH0150905B2 JP H0150905 B2 JPH0150905 B2 JP H0150905B2 JP 55127490 A JP55127490 A JP 55127490A JP 12749080 A JP12749080 A JP 12749080A JP H0150905 B2 JPH0150905 B2 JP H0150905B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoconductive
- atoms
- intermediate layer
- electrophotography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
Landscapes
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55127490A JPS5752178A (en) | 1980-09-13 | 1980-09-13 | Photoconductive member |
US06/299,576 US4394425A (en) | 1980-09-12 | 1981-09-04 | Photoconductive member with α-Si(C) barrier layer |
GB8127479A GB2086133B (en) | 1980-09-12 | 1981-09-11 | Photoconductive member |
CA000385692A CA1181630A (en) | 1980-09-12 | 1981-09-11 | Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing carbon |
DE19813136141 DE3136141A1 (de) | 1980-09-12 | 1981-09-11 | Photoleitfaehiges element |
FR8117327A FR2490359B1 (fr) | 1980-09-12 | 1981-09-14 | Element photoconducteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55127490A JPS5752178A (en) | 1980-09-13 | 1980-09-13 | Photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5752178A JPS5752178A (en) | 1982-03-27 |
JPH0150905B2 true JPH0150905B2 (en]) | 1989-11-01 |
Family
ID=14961237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55127490A Granted JPS5752178A (en) | 1980-09-12 | 1980-09-13 | Photoconductive member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752178A (en]) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065390B2 (ja) * | 1984-01-05 | 1994-01-19 | 株式会社日立製作所 | 電子写真感光体の製造方法 |
US4675263A (en) | 1984-03-12 | 1987-06-23 | Canon Kabushiki Kaisha | Member having substrate and light-receiving layer of A-Si:Ge film and A-Si film with non-parallel interface with substrate |
US4678733A (en) | 1984-10-15 | 1987-07-07 | Canon Kabushiki Kaisha | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
JPH0355205Y2 (en]) * | 1985-08-29 | 1991-12-09 | ||
JPS6289064A (ja) | 1985-10-16 | 1987-04-23 | Canon Inc | 光受容部材 |
JPS6290663A (ja) | 1985-10-17 | 1987-04-25 | Canon Inc | 光受容部材 |
JPS62106468A (ja) | 1985-11-01 | 1987-05-16 | Canon Inc | 光受容部材 |
JPS62106470A (ja) | 1985-11-02 | 1987-05-16 | Canon Inc | 光受容部材 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
JPS54145540A (en) * | 1978-05-04 | 1979-11-13 | Canon Inc | Electrophotographic image forming material |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
JPS564150A (en) * | 1979-06-22 | 1981-01-17 | Minolta Camera Co Ltd | Electrophotographic receptor |
JPS56125881A (en) * | 1980-03-06 | 1981-10-02 | Fuji Photo Film Co Ltd | Optical semiconductor element |
-
1980
- 1980-09-13 JP JP55127490A patent/JPS5752178A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5752178A (en) | 1982-03-27 |